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Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof
Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof
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机译:具有多个电荷存储层的浮栅,制造该浮栅的方法,使用该浮栅的非易失性存储器件及其制造方法
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摘要
Provided is a floating gate having multiple charge storing layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storing layers using metal nano-crystals of nano size is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-crystal film which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of metal nano-crystals for trapping charges are deposited. The floating gate is made by self-assembling the metal nano-crystals on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.
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