Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method

摘要

The properties of a nanodot-type floating gate memory with a multilayered nanodot array were investigated. High-density and uniform cobalt bio-nanodot (Co-BND) arrays were stacked on a SiO2 tunnel oxide layer by a bio-layer-by-layer method (Bio-LBL). Memory properties, such as hysteresis width, charge retention, charging speed, and reliability, were improved by increasing the number of Co-BND arrays in a floating gate memory. This research confirmed that the proposed memory is promising for application in next-generation memory devices.