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Method of forming interlayer dielectric film above metal gate of semiconductor device
Method of forming interlayer dielectric film above metal gate of semiconductor device
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机译:在半导体器件的金属栅极上方形成层间介电膜的方法
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摘要
A method of forming an interlayer dielectric film above a metal gate of a metal oxide semiconductor device comprises forming a metal gate above a semiconductor substrate; and forming the interlayer dielectric film above the metal gate by reacting a silicon-containing compound as precursor and a reactant for oxidizing the silicon-containing compound. The silicon-containing compound has the formula:Six(A)y(B)z(C)m(D)n (I)wherein x is in the range of from 1 to 9; y+z+m+n is in the range of from 4 to 20; and A, B, C, and D independently represent a functional group connecting with a silicon atom. The functional group is selected from a group consisting of alkyl, alkenyl, alkynyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, —NO2, and —CN.
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机译:在金属氧化物半导体器件的金属栅极上方形成层间电介质膜的方法包括:在半导体衬底上方形成金属栅极;以及在半导体衬底上方形成金属栅极。通过使作为前体的含硅化合物和用于氧化该含硅化合物的反应物反应,在金属栅极上方形成层间介电膜。含硅化合物具有下式:<?in-line-formulae description =“ In-line Formulae” end =“ lead”?> Si x Sub>(A) y Sub>(B) z < / Sub>(C) m Sub>(D) n Sub>(I)<?in-line-formulae description =“ In-line Formulae” end =“ tail”?>其中x在1至9的范围内; y + z + m + n在4到20的范围内; A,B,C和D独立地表示与硅原子连接的官能团。官能团选自烷基,烯基,炔基,芳基,烷基芳基,烷氧基,烷基羰基,羧基,烷基羰氧基,酰胺,氨基,烷基羰基氨基,-NO 2 Sub>和-CN。
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