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Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces
Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces
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机译:通过化学镀和减少的剪切力去除多余材料而形成的半导体器件的接触元件
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摘要
The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.
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