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CONTACT ELEMENTS OF A SEMICONDUCTOR DEVICE FORMED BY ELECTROLESS PLATING AND EXCESS MATERIAL REMOVAL WITH REDUCED SHEER FORCES
CONTACT ELEMENTS OF A SEMICONDUCTOR DEVICE FORMED BY ELECTROLESS PLATING AND EXCESS MATERIAL REMOVAL WITH REDUCED SHEER FORCES
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机译:以无电电镀和减少的剪力将材料制成的半导体器件的接触元件
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摘要
The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.
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