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Nonvolatile memory systems using time-dependent read voltages and methods of operating the same
Nonvolatile memory systems using time-dependent read voltages and methods of operating the same
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机译:使用与时间有关的读取电压的非易失性存储系统及其操作方法
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摘要
An elapsed time with respect to a programming operation on a memory cell of a nonvolatile memory is determined, a read voltage is adjusted based on the determined elapsed time and a read operation is performed on the memory cell using the adjusted read voltage. Determining the elapsed time may be preceded by performing the programming operation in response to a first access request and determining the elapsed time may include determining the elapsed time in response to a second access request. Memory systems supporting such operations are also described.
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