A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SISB1 X/SBGESBX/SB MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A PH VALUE OF 3.0 TO 5.5

摘要

1 xxA process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGe material with 0.1 = x 1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles organic particles or a mixture or composite thereof (B) at least one type of an oxidizing agent and (C) an aqueous medium.