PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SI1-XGEX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A PH VALUE OF 3.0 TO 5.5

摘要

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si_1-xGe_x material with 0.1≦x1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof (B) at least one type of an oxidizing agent, and (C) an aqueous medium.