Structure for producing the ohm contact to the substrate of silicon carbide type n, and method for producing the ohm contact to the substrate of silicon carbide type n

摘要

the subject of the invention is a structure for manufacturing contact omowego to substrates with a silicon carbide type n and the way to produce contact omowego to substrates with a silicon carbide type n.the structure consists of three basic layers (1, 2, 3), whereby the first layer from the substrate (4) is a layer (1) containing nickel and silicon, the atomic ratio between ni: si = 1: 1 to the ni: si = 31: 12, the second layer is a layer (2) containing zirconium thickness kor zystnie greater than 10 nm.a third layer (3) is a layer containing nickel and silicon atomic ratio in the range from ni: si = 3: 2 to ni: si = 4: 1. atomic ratio ni: si layer (3) is greater than the layer (1) of at least 10%, and the thickness of the layers (1) and (3) is selected so that the number of atoms per unit area nickel sic was approximately equal in both layers.after deposit of individual layers of structure, the contact is subjected to heat treatment dwuetapowemu. in the first stage structure basking in temperature lower than 400u00b0c, and in the second stage structure basking in temperature higher than 850u00b0c.