首页> 外国专利> POSITIVE PHOTORESIST COMPOSITION AND POSITIVE PHOTORESIST DEVELOPING PROCESS

POSITIVE PHOTORESIST COMPOSITION AND POSITIVE PHOTORESIST DEVELOPING PROCESS

机译:正性光致抗蚀剂组成和正性光致抗蚀剂的形成过程

摘要

The present invention provides a positive photoresist composition and steps of a positive photoresist developing process. The positive photoresist composition comprises a polymer (A), a photoacid generator (B), a solvent, and an additive. The positive photoresist composition also comprises a photosensitizer (C) and a nitrogen-containing compound (D). Light energy with a wavelength of 365nm can be absorbed by the positive photoresist, and after excitation, electrons are transferred to the absorption-free photoacid generator at the wavelength of 365nm, so that the photoacid generator generates an acid. In addition, by using steps of the positive photoresist developing process provided in the present invention, an image can be formed on a substrate by using the photoresist. When the image is formed at the light irradiation of 365nm by using the photoresist composition provided in the present invention, the light sensitization speed is high, the resolution is high, and the roughness of a line edge is low.
机译:本发明提供了正性光刻胶组合物和正性光刻胶显影工艺的步骤。正性光致抗蚀剂组合物包含聚合物(A),光酸产生剂(B),溶剂和添加剂。正性光致抗蚀剂组合物还包含光敏剂(C)和含氮化合物(D)。正性光致抗蚀剂可以吸收波长为365nm的光能,激发后,电子以365nm的波长转移到无吸收的光致产酸剂中,从而使光致产酸剂产生酸。另外,通过使用本发明提供的正性光刻胶显影工艺的步骤,可以通过使用光刻胶在基板上形成图像。当通过使用本发明提供的光刻胶组合物在365nm的光照射下形成图像时,光敏速度高,分辨率高并且线边缘的粗糙度低。

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