A power semiconductor device comprises a first metal electrode (112) and a second metal electrode (132) formed on a first substrate surface of a semiconductor substrate (140), a semi-insulating field plate (160) interconnecting said first and second metal electrodes (112, 132) and an insulating oxide layer (150) extending between said first and second metal electrodes (112, 132) and between said field plate (160) and said semiconductor substrate (140), wherein said semi-insulating field plate (160) is a titanium nitride (TiN) field plate.
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