SYMMETRIC AND ISOLATED LDMOS COMPONENT AND MANUFACTURING METHOD THEREFOR

摘要

A symmetric and isolated LDMOS component and a manufacturing method therefor. The symmetric and isolated LDMOS component (1) comprises: a buried-layer isolated-layer (2); a P-type well region (3); a side surface isolated region (4, 5); a gate (6); a source region (7), disposed on one side of the gate (6); a drain region (8), disposed one the other side of the gate (6) and symmetric to the source region (7). The source region (7) and the drain region (8) separately comprise an N-type doped region (74a, 84a) disposed in the P-type well region (3); an N-type drift region (72a, 72b, 82a, 82b) neighboring to the N-type doped region (74a, 84a); a field oxide layer (73a, 73b, 83a, 83b) disposed in the N-type drift region (72a, 72b, 82a, 82b); and a heavily doped N-type region (71a, 81a) disposed on the N-type doped region (74a, 84a). In the P-type well region (3), a P-type injection region (9) is formed between the N-type doped region (74a, 84a) and the buried-layer isolated-layer (2) by means of P-type injection, and the density of an impurity injection surface in the P-type injection is at the magnitude ranging from 10¹³cm^-2 to 10¹⁴cm^-2.