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TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR MANUFACTURING TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN
TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR MANUFACTURING TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN
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机译:晶体管所用的具有氮化物的半导体以及制造晶体管所用的具有氮化物的半导体的方法
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摘要
A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMT) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode.
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