SILICON CONTROLLED RECTIFIER FOR HIGH VOLTAGE APPLICATIONS

摘要

In a silicon controlled rectifier, an anode region includes p-type anode well regions laterally surrounded by an n-type well region. The length of a p-type anode well region measured in a first direction is larger than the width of the p-type anode well region measured in a second direction vertical to the first direction. The p-type anode well region meets with the n-type well region in a bonding part. The bonding part is extended in the second direction between the p-type anode well region and the n-type well region. A cathode region includes multiple n-type cathode well regions in a p-type well region. The length of the n-type cathode well region measured in the first direction is larger than the width of the n-type cathode well region measured in the second direction.;COPYRIGHT KIPO 2015