SILICON CONTROLLED RECTIFIER FOR HIGH VOLTAGE APPLICATIONS

摘要

in the silicon controlled rectifier, the p-type anode region comprises a well region surrounded by the anode side by an n-type well region. The length of the p-type well region anode measured in the first direction is greater than the width of the p-type well region anode measured in a second direction perpendicular to the first direction. p-type well region and n-type well region, meet at the joint, the joint extends in a second direction between the p-type well region and n-type well region. Cathode region includes a plurality of n-type cathode region formed in the p-type well region well. The length of the n-type well region cathode measured in the first direction is greater than the width of the n-type well region cathode measured in the second direction. ;