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N-Type Extended Drain Silicon Controlled Rectifier with Counter Pocket Source (CPS) for High Latchup Immunity of High Voltage Operating I/O Application

机译：n型延伸漏极硅控制整流器，具有计数器袋源（CPS），用于高压操作I / O应用的高锁存免疫力

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1. N-Type Extended Drain Silicon Controlled Rectifier Electrostatic Discharge Protection Device for High-Voltage Operating Input/Output Applications [J] . Yong-Jin Seo, Kil-Ho Kim Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第4B期

机译：用于高压工作输入/输出应用的N型扩展漏极可控硅整流器静电放电保护装置
2. Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application [J] . Kil-Ho Kim, Yong-Jin Seo Microelectronics & Reliability . 2013,第2期

机译：具有P型MOSFET导通结构的N型可控硅整流器的静电放电（ESD）保护，适用于高压操作I / O应用
3. Dependence of Device Structures on Latchup Immunity in a High-Voltage 40-V CMOS Process With Drain-Extended MOSFETs [J] . Sheng-Fu Hsu, Ming-Dou Ker IEEE Transactions on Electron Devices . 2007,第4期

机译：器件结构对带有漏极扩展MOSFET的高压40V CMOS工艺中闩锁抗扰度的依赖性
4. Comparison of latchup immunity for silicided source/drain at different n+ implant energy [C] . Leong Kam Chew, Liu Po Chen Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong . 1997

机译：不同n +注入能量下硅化源极/漏极的闩锁免疫力比较
5. Design, fabrication and characterization of high voltage 4H-silicon carbide junction rectifiers for power switching applications. [D] . Losee, Peter. 2007

机译：用于功率开关应用的高压4H-碳化硅结整流器的设计，制造和表征。
6. Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers [O] . Shen-Li Chen, Yi-Cih Wu 2018

机译：分立工程用于嵌入式硅控整流器的高压60V n沟道横向扩散MOSFET的瞬态传感和可靠性改善。
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8. High Current and High Voltage Silicon Controlled Rectifiers [R] . 1964

机译：高电流和高压可控硅整流器

N-Type Extended Drain Silicon Controlled Rectifier with Counter Pocket Source (CPS) for High Latchup Immunity of High Voltage Operating I/O Application

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