ELECTROSTATIC DISCHARGE DEVICE BASED ON LATERAL INSULATED GATE BIPOLAR TRANSISTOR HAVING LOW TRIGGER VOLTAGE

摘要

Disclosed is an electrostatic discharge device which enters a holding region at a low trigger voltage to perform a stable operation. A first P-well active region, an N-well active region, and a second P-well active region are formed on a dip N-well region. The first P-well active region is electrically connected to the second P-well active region by wires. Also, a separation distance of the first P-well active region and the N-well active region is longer than that of the N-well active region and the second P-well active region. Therefore, a punch-through phenomenon is generated between the N-well active region and the second P-well active region. The equivalence circuit of a diode is formed, thereby, an electrostatic discharge device can quickly enter the holding region even at a low trigger voltage.;COPYRIGHT KIPO 2016