MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH INTEGRATED MAGNETIC FILM ENHANCED CIRCUIT ELEMENTS

摘要

A Magnetoresistive Random Access Memory (MRAM) integrated circuit includes a substrate, a magnetic tunnel junction region, a magnetic circuit element, and an integrated magnetic material. The magnetic tunnel junction region is disposed on the substrate, and includes a first magnetic layer and a second magnetic layer separated by a tunnel barrier insulating layer. The magnetic circuit element region is disposed on the substrate, and includes a plurality of interconnected metal portions. The integrated magnetic material is disposed on the substrate adjacent to the plurality of interconnected metal portions.