Low-power switching in magnetoresistive random access memory bits using enhanced permeability dielectric films

摘要

We reduced the switching field (H_(sw)) in arrays of single-layer magnetoresistive random access memory elements using enhanced permeability dielectric (EPD) films. This reduction is due to an increased magnetic flux density produced at the bit by increasing the permeability μ of the surrounding dielectric. The authors produced EPD films by embedding superparamagnetic nanoparticles of various sizes in oxides of Al, Mg, or Si. For bits surrounded by EPD, H_(sw) decreased linearly as μ increased. Using this approach, we reduced H_(sw) by ≈40% for μ=3.5, without changing the energy barrier to magnetization reversal.