SEMICONDUCTOR ACTIVE LAYER COMPRISED ELASTIC MATERIAL, GATE INSULATING FILM AND THIN-FILM TRANSISTOR USING THE SAME

摘要

The present invention relates to a semiconductor active layer containing an elastic material, a gate insulating film containing an elastic material, and a thin-film transistor using the same. The elastic material in the semiconductor active layer is mixed with a semiconductor material (organic semiconductor or metal oxide semiconductor), wherein a ratio of the elastic material to the semiconductor material (organic semiconductor or metal oxide semiconductor) is 10 : 90 - 70 : 30 in wt%. The elastic material in the gate insulating film is mixed with an organic insulative film or an inorganic insulative film, wherein a ratio of the elastic material to the organic insulative film or the inorganic insulative film is 10 : 90 - 70 : 30 in wt%. The thin-film transistor comprises: a substrate; a source and drain electrodes disposed on the substrate and separated from each other; a semiconductor active layer that is disposed across the front side of the substrate having the source and drain electrodes and contains an elastic material; a gate insulating film that is disposed on the top front side of the active layer and contains an elastic material; and a gate electrode disposed on the insulating film.