METHOD OF MICROMACHINING USING DEEP DRY ETCHING AND MEMS DEVICE MANUFACTURED BY THE SAME

摘要

The present invention provides a micromachining method using deep dry etching, comprising: (S100) a step of preparing a support substrate made of silicone, an upper silicone layer, and a silicon on insulator (SOI) wafer made of an insulation layer between the support substrate and the upper silicone layer; and (S300) a step of coating a third photo resist on the SOI wafer to substitute an existing half sawing, and carrying out a first deep etching of the SOI wafer using the third photo resist.