METHOD AND STRUCTURE TO BOOST MOSFET PERFORMANCE AND NBTI

摘要

This disclosure is of a method of forming a p-type field effect transistor (pFET) structure It provides an example. Is to form a mask layer on a semiconductor substrate, the mask layer including an aperture exposing the semiconductor region of the semiconductor substrate in the opening; By performing ion implantation of an n-type dopant in the semiconductor substrate through an opening in the mask layer to form an n-type well (n-well) on a semiconductor region; And by performing a germanium (Ge) channel injected into the semiconductor substrate through an opening in the mask layer, includes forming a Ge channel implant region in n- well. ;