首页> 外国专利> 3 METHODS OF FABRICATING THREE-DIMENSIONAL CAPACITOR STRUCTURES HAVING PLANAR METAL-INSULATOR-METAL AND VERTICAL CAPACITORS THEREIN

3 METHODS OF FABRICATING THREE-DIMENSIONAL CAPACITOR STRUCTURES HAVING PLANAR METAL-INSULATOR-METAL AND VERTICAL CAPACITORS THEREIN

机译:3种其中具有平面金属绝缘体金属和垂直电容器的三维电容器结构的制造方法

摘要

planar metal-insulator-production method of the three-dimensional capacitor structure having a metal capacitor and a vertical capacitor is provided . On the production method of the three-dimensional capacitor structure is a substrate, forming a first horizontal MIM capacitors, and on the first horizontal MIM capacitors, a first forming an interlayer insulating layer, in the first insulating layer, a first forming vertical capacitor electrode, and the image on the first interlayer insulating layer, to form a second horizontal MIM capacitor, forming the second horizontal MIM capacitor by the first vertical capacitor electrodes, the first horizontal MIM capacitors forming an upper capacitor electrode electrically connected to the upper capacitor electrode, in the first interlayer insulating layer, it includes forming the elongated bottom capacitor electrode so as to resist to the upper electrode of the first and second horizontal MIM capacitors . ; flat metal-insulator-metal capacitors, vertical capacitors
机译:提供了一种具有金属电容器和垂直电容器的三维电容器结构的平面金属绝缘体的制造方法。在三维电容器结构的制造方法上,在基板上形成第一水平MIM电容器,在第一水平MIM电容器上,首先形成层间绝缘层,在第一绝缘层中,首先形成垂直电容器电极以及在第一层间绝缘层上的图像,形成第二水平MIM电容器,通过第一垂直电容器电极形成第二水平MIM电容器,第一水平MIM电容器形成与上部电容器电极电连接的上部电容器电极,在第一层间绝缘层中,其包括形成细长的底部电容器电极,以抵抗第一水平MIM电容器和第二水平MIM电容器的上部电极。 ;扁平金属-绝缘体-金属电容器,垂直电容器

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