A semiconductor device with differently stressed etching stop layers in conjunction with pn - transitions of different design in the different component areas and a method for the production of the semiconductor component

摘要

A method with:Carrying out a preliminary amorphization per process - at the drain and source regions in the first p - transistors and / or first n - transistors in a first component area, while second p - transistors and second n - transistors, which, in a second component are formed of a semiconductor component, may be masked, wherein the preliminary amorphization per process the implantation conditions in a subsequent implanting process for the production of low drain - and source regions is improved, and wherein the first component region is a respective said logic section and the second component represents a memory area;Forming a strained layer with a pressure bracing on via the first and second p - transistors; andForming a strained layer with a tensile stress by means of the first and second transistors n -.