Controllable Layer-by-Layer Etching of III-V Compound Semiconductors with anElectron Cyclotron Resonance Source

摘要

A highly controllable etching technique, in which the etching proceeds layer, hasbeen studied using a plasma generated by an electron cyclotron resonance (ECR) source. In this etching technique, the sample is exposed to reactive chlorine radicals and low energy Ar ions separately and repeatedly. For GaAs etching, the chlorine radicals were typically generated with 35 W microwave power and the Ar ions were produced using 50 W microwave power and 6 W rf power, with a self-