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Tlxsi1 - xn layers and their preparation
Tlxsi1 - xn layers and their preparation
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机译:TLXSI1-XN层及其制备
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摘要
The present invention relates to a workpiece with coating which coating of at least a tixSi1 - xN layer comprises, characterized in that x ≦ 0.85 and the tixSi1 - xN layer contains nanocrystals, and the resulting nanocrystals an average particle size of not more than 15 nm and a (200) texture. The invention also relates to a method for the manufacture of the aforementioned layer, characterized in that for the preparation of a sputtering process in which it is used on the target surface of the sputtering targets to current densities of greater than 0.2 a / cm2, and the target a tixsi1 - x - target, wherein x ≦ 0.85.
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机译:具有涂层的工件技术领域本发明涉及一种具有涂层的工件,该涂层至少包括ti x Sub> Si 1-x Sub> N层的涂层,其特征在于,x≤0.85并且ti x Sub> Si 1-x Sub> N层包含纳米晶体,所得纳米晶体的平均粒径不超过15 nm,并且具有(200)织构。本发明还涉及一种用于制造上述层的方法,其特征在于,用于制备溅射工艺,其中将其用于溅射靶的靶表面上以大于0.2a / cm 2的电流密度,以及目标为tixsi1-x-目标,其中x≤0.85。
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