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Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally- Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy

机译：通过透射电子显微镜确定的数字合金化调制前驱体外延生长的alxGa1-xN外延层的结构质量

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Hawkridge, M. E.; Liliental-Weber, Z.; Kim, H. J.; Choi, S.; Yoo, D.;
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年度 2009
页码 1-15
总页数 15
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxial growth ; Aluminum gallium nitrides ; Transmission electron microscopy ; Chemical vapor deposition ; Layers;

机译：外延生长;氮化铝镓;透射电子显微镜;化学气相沉积;层;

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1. The Structural Quality Of Al_xga_(1-x)n Epitaxial Layers Grown By Digitally Alloyed Modulated Precursor Epitaxy Determined By Transmission Electron Microscopy [J] . M. E. Hawkridge, Z. Liliental-Weber, Hee Jin Kim, Applied Physicsletters . 2009,第7期

机译：透射电子显微镜确定的数字合金调制前驱外延生长的Al_xga_（1-x）n外延层的结构质量
2. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: Ⅱ-Transmission electron microscopy and atomic force microscopy [J] . N. Faleev, N. Sustersic, N. Bhargava, Journal of Crystal Growth . 2013,第FEBa15期

机译：通过分子束外延在Si（001）和Ge（001）衬底上生长的SiGe外延层的结构研究：Ⅱ-透射电子显微镜和原子力显微镜
3. Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study [J] . Y.H. Kim, J.H. Lee, Y.K. Noh, Thin Solid Films . 2015,第feba2期

机译：通过分子束外延生长在Si（110）衬底上生长的AlN薄层的微观结构特征：透射电子显微镜研究
4. Study by transmission electron microscopy of GalnSb layers grown on (001) GaAs substrates by molecular beam epitaxy [C] . G Aragon, M J de Castro, J J Perez-Camacho, Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：通过分子束外延在（001）GaAs基材上生长的Galnsb层的透射电子显微镜研究
5. High resolution x-ray diffraction of high quality 2 micron quaternary indium gallium arsenide antimonide digital alloy heterostructures grown by modulated molecular beam epitaxy. [D] . Mourad, Carole Issa. 2000

机译：通过调制分子束外延生长的高质量2微米四价砷化镓铟镓锑数字合金异质结构的高分辨率X射线衍射。
6. The Microstructural Characterization of Multiferroic LaFeO3-YMnO3 Multilayers Grown on (001)- and (111)-SrTiO3 Substrates by Transmission Electron Microscopy [O] . Bin Pang, Lei Sun, Xuan Shen, 2017

机译：（001）-和（111）-SrTiO3衬底上生长的多铁性LaFeO3-YMnO3多层膜的显微结构表征
7. The structural quality of AlxGa1−xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy [O] . M. E. Hawkridge, Z. Liliental-Weber, Hee Jin Kim, 2009

机译：通过透射电子显微镜测定的数字合金调制的调节前体外延生长的AlxGA1-XN外延层的结构质量

Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally- Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy

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