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light-emitting diode with silicon and light-emitting diode lamp submount

机译:带硅的发光二极管和发光二极管灯座

摘要

light-emitting diode with a silicon submount, comprehensively.a silicon submount, fully integrated circuit for stromu00fcberwachung, within the silicon submounts is a p - electrode in the bottom of the silicon submounts is an n electrode on the underside of the silicon submounts is un d a bodenstu00fcck to heat dissipation, located on the underside of the silicon submounts iswith the integrated circuit to stromu00fcberwachung electrically with the p electrode and the n electrode is connected; andat least one light emitting diodes (leds) chip, the eutektisch at a top of the silicon submounts gebondet, whereby the at least one light-emitting diodes - chip electrically with the p electrode and the n electrode is connectedwith the silicon submount a heat channel between the light emitting diodes (leds) chip and the bodenstu00fcck to heat dissipation through the inside of the silicon submounts educates.
机译:带有硅基座的发光二极管。硅底座,用于硅底座的完全集成电路,位于硅底座内,p电极-硅底座底部的电极,n电极位于硅底座下侧,不散热,位于硅基板的底面与集成电路电连接,其p电极与n电极相连。和至少一个发光二极管(led)芯片,在硅基座gebondet的顶部有eutektisch,其中至少一个发光二极管-与p电极和n电极电连接通过硅基板,在发光二极管(led)芯片和bodenst之间的热通道会通过硅基板内部进行散热。

著录项

  • 公开/公告号DE202015101443U1

    专利类型

  • 公开/公告日2015-05-21

    原文格式PDF

  • 申请/专利权人 LEADRAY ENERGY CO. LTD.;

    申请/专利号DE202015101443U1

  • 发明设计人

    申请日2015-03-20

  • 分类号H01L25/16;H01L23/62;H01L23/36;H01L23/488;F21Y101/02;F21V29/00;

  • 国家 DE

  • 入库时间 2022-08-21 14:54:39

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