A novel AlGalnP light-emitting diode (LED) is presented that employs high-reflectivity omnidirectional reflector (ODR) submounts. It is shown that the reflective-submount (RS) LED has a higher light-extraction efficiency than conventional LEDs. Red AlGalnP RS-LEDs bonded to Si-substrates are demonstrated using a silver-based ODR. The ODR is perforated by an array of small-area low-resistance ohmic contacts. The optical and electrical characteristics of the RS-LEDs are presented and compared to conventional AlGalnP absorbing substrates (AS) LEDs with distributed Bragg reflectors (DBR). It is shown that the light output from the RS-LED exceeds that of AS-LEDs by about a factor of two.
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