INTEGRATING ATOMIC SCALE ALD (ATOMIC LAYER DEPOSITION) PROCESS AND ALE (ATOMIC LAYER ETCHING) PROCESS

摘要

SOLUTION: Methods are provided for integrating atomic layer etching and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etching and atomic layer deposition processes to protect feature degradation during etching, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.SELECTED DRAWING: Figure 1C