METHODS AND APPARATUSES FOR UNIFORM REDUCTION OF IN-FEATURE WET ETCH RATE OF SILICON NITRIDE FILM FORMED BY ALD

摘要

PROBLEM TO BE SOLVED: To provide methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by the atomic layer deposition (ALD).;SOLUTION: A method includes adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber so as to form an adsorption-limited layer of the precursor, and then removing the unadsorbed precursor from the volume surrounding the adsorbed precursor. The adsorbed precursor is then reacted by exposing it to plasma comprising N-containing ions and/or radicals so as to form a SiN film layer on the substrate, and the SiN film layer is then densified by exposing it to He plasma. The foregoing steps are then repeated to form another densified SiN film layer on the substrate.;SELECTED DRAWING: Figure 3;COPYRIGHT: (C)2016,JPO&INPIT