III-V group pit defects has been reduced semiconductor structure and method of forming the same

摘要

Execution configuration regards the semiconductor structure and its formation manner. In several execution configurations, these manners can be used in order to produce the semiconductor structure which consists of the IIIV group material of InGaN and the like. InIIIV group semiconductor formation, in order InIIIV group semiconductor formation to bring the oversaturation status which grows at V pit density which is lightened than saturation status, grows at the indium concentration which exceeds saturation status by adjusting growth condition such as temperature of the growth surface.