Semiconductor Device Including a Superjunction Structure with Drift Regions and Compensation Structures

摘要

A vertical semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, a first trench including a dielectric, a gate electrode and a field electrode, the first trench extending into the semiconductor body from the first surface, and a superjunction structure in the semiconductor body. The superjunction structure includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface.