METHOD FOR FABRICATING A POWER SEMICONDUCTOR DEVICE LONGITUDINAL SUPERJUNCTION DRIFT REGION STRUCTURE

摘要

A method for fabricating a power semiconductor device longitudinal superjunction drift region structure, relating to semiconductor technology, the fabrication method comprising: taking a P⁺ monocrystalline silicon wafer as a substrate (11); first, epitaxially growing a P-type layer (12) on the surface of the P+ monocrystalline silicon substrate (11); then, on the surface of the P-type layer (12), forming an N-type layer (13) by means of epitaxial or ion implantation and drive-in; the P-type layer (12) being a voltage resistant layer of the superjunction part; the N-type layer (13) being the MOS part forming region of the front of the device; after front-side processing is complete, performing backgrinding; by means of selectively implanting hydrogen ions into the back side as well as low-temperature annealing, forming an N-column region in the superjunction structure. The beneficial effects of the present invention are: a simple fabrication method, a reduced degree of difficulty in the manufacturing process, and reduced manufacturing costs, and the invention is particularly suitable for use in the fabrication of power semiconductor device longitudinal superjunction drift region structures.