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Semiconductor devices including a gate structure between active regions, and methods of forming semiconductor devices including a gate structure between active regions
Semiconductor devices including a gate structure between active regions, and methods of forming semiconductor devices including a gate structure between active regions
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机译:包括有源区之间的栅极结构的半导体器件以及形成包括有源区之间的栅极结构的半导体器件的方法
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摘要
Semiconductor devices are provided. The semiconductor devices may include an isolation pattern and first, second, and third active regions of a substrate. The first active region may be spaced apart from the second active region by a first width of the isolation pattern in a direction. A gate structure may be between the first and second active regions and may include a second width wider than the first width of the isolation pattern in the direction. Related methods of forming semiconductor devices are also provided.
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