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Hash Fast Marching Method for Simulation of Surface Evolution in Photoresist Etching Process
Hash Fast Marching Method for Simulation of Surface Evolution in Photoresist Etching Process
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机译:光刻胶蚀刻过程中表面演化模拟的哈希快速行进方法
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摘要
Disclosed is a hash fast marching method for simulation of surface evolution in a photoresist etching process, including: dividing a substrate into grids and determining an etching speed matrix, initializing a grid point time value, building a hash table and a minimum heap, marching forward and performing an update, and repeating the foregoing steps until a time value of a minimum root node is not smaller than a preset photoresist etching (photoresist development) time. In the invention method, calculation is performed only for grid points in a narrow band (NarrowBand) around the established surface, and this narrow band only has a width of one grid point, so that higher iteration efficiency is achieved.
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