A modeling method for an etching yield in a plasma etching surface evolution simulation, belonging to the technical field of simulating an etching surface process in the microelectronics processing technology. The method comprises: conducting parameterization representation on etching yield models of various ions; obtaining optimization parameters in the etching yield models by using an optimization algorithm; and in the optimization process, selecting some specific positions on a trench surface, and by comparing simulation etching rates of these points at different times in the evolution process with the actual etching rate, calculating the superiority and inferiority (adaptive value) of each group of model parameters, so as to be used as a basis for selecting the optimization algorithm and generating a next model parameter set. An etching yield model is obtained by substituting the obtained model parameters into a model parametrization formula. According to etching processing data, etching yield model parameters of various ions are optimized, thereby solving the problem of inaccurate etching yield parameters evaluated by the ion bombardment experimental method and the molecular dynamics method.
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