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GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL

机译:III-V型复合半导体电池的网格设计

摘要

A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a surface grid including a plurality of spaced apart grid lines, wherein the grid lines have a thickness greater than 7 microns, and each grid line has a cross-section in the shape of a trapezoid with a cross-sectional area between 45 and 55 square microns.
机译:一种用于从太阳产生能量的光伏太阳能电池,其包括锗衬底,该锗衬底包括第一光敏结并形成底部太阳能子电池;砷化镓中间电池设置在所述衬底上;设置在中间电池上方的磷化铟镓顶部电池;包括多个间隔开的网格线的表面网格,其中网格线的厚度大于7微米,并且每个网格线具有梯形形状的横截面,其横截面面积在45至55之间平方微米。

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