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Multi-Voltage Complementary Metal Oxide Semiconductor Integrated Circuits Based On Always-On N-Well Architecture
Multi-Voltage Complementary Metal Oxide Semiconductor Integrated Circuits Based On Always-On N-Well Architecture
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机译:基于永远在线N井架构的多电压互补金属氧化物半导体集成电路
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摘要
Examples of multi-voltage (MV) complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) based on always-on N-well architecture are described. A MV CMOS IC may include first CMOS cells, second CMOS cells, N-wells and always-on taps. Each first CMOS cell may have a supply terminal configured to receive a local supply voltage, and an N-well (NW) terminal configured to receive a global supply voltage. The second CMOS cells may include always-on CMOS cells. Each second CMOS cell may have a supply terminal configured to receive the global supply voltage, and an NW terminal configured to receive the global supply voltage. The NW terminal of at least one of the second CMOS cells and the NW terminal of at least one of the first CMOS cells may be formed in a first N-well of the one or more N-wells.
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