Construct SiGe fins, pass through: it includes in upward direction containing silicon base layer and a kind of siliceous first fin structure from base that (I), which provides intermediate sub-component,; (II) refines sub-component and passes through the first fin structure of the first and second sides of base and at least part of covering at least part top surface and the layer of preparatory thermal oxide, including Silicon-Germanium (SiGe); (III) further refine the sub-component by the preparatory thermal oxide layer of thermal oxide migrate to Ge content from preparatory thermal oxide attack at least part basal layer and at least part the first fin structure.
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