首页> 外国专利> SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCTIVE PILLAR, SEMICONDUCTOR STRUCTURE INCLUDING A CONTACT CONTACTING AN OUTER LAYER OF AN ELECTRICALLY CONDUCTIVE STRUCTURE AND METHOD FOR THE FORMATION THEREOF

SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCTIVE PILLAR, SEMICONDUCTOR STRUCTURE INCLUDING A CONTACT CONTACTING AN OUTER LAYER OF AN ELECTRICALLY CONDUCTIVE STRUCTURE AND METHOD FOR THE FORMATION THEREOF

机译:至少包括一个导电柱的半导体结构,包括导电层的外层的接触导体的半导体结构及其形成方法

摘要

A semiconductor structure includes a substrate, at least one electrically conductive pillar provided over the substrate and an electrically conductive structure provided over the substrate. The electrically conductive pillar includes an inner portion and an outer layer that is provided below the inner portion and lateral to the inner portion. The electrically conductive structure also includes an inner portion and an outer layer that is provided below the inner portion and lateral to the inner portion. The electrically conductive structure annularly encloses each of the at least one electrically conductive pillar. The outer layer of each of the at least one electrically conductive pillar contacts the outer layer of the electrically conductive structure. The outer layer of the at least one electrically conductive pillar and the outer layer of the electrically conductive structure are formed of different metallic materials.
机译:一种半导体结构,包括基板,设置在基板上方的至少一个导电柱和设置在基板上方的导电结构。导电柱包括内部和设置在内部下方并在内部横向的外层。导电结构还包括内部和设置在内部下方并在内部横向的外层。导电结构环形地包围至少一个导电柱中的每一个。至少一个导电柱中的每一个的外层接触导电结构的外层。至少一个导电柱的外层和导电结构的外层由不同的金属材料形成。

著录项

  • 公开/公告号US2016247891A1

    专利类型

  • 公开/公告日2016-08-25

    原文格式PDF

  • 申请/专利权人 GLOBALFOUNDRIES INC.;

    申请/专利号US201514628947

  • 申请日2015-02-23

  • 分类号H01L29/49;H01L23/535;H01L21/8238;H01L27/092;

  • 国家 US

  • 入库时间 2022-08-21 14:35:45

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