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Optical proximity correction (OPC) accounting for critical dimension (CD) variation from inter-level effects
Optical proximity correction (OPC) accounting for critical dimension (CD) variation from inter-level effects
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机译:光学邻近校正(OPC),考虑了层间效应引起的临界尺寸(CD)的变化
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摘要
Various embodiments include computer-implemented methods, computer program products and systems for modeling at least one feature in an integrated circuit (IC) layout for an inter-layer effect. In some cases, approaches include a computer-implemented method of modeling at least one feature in an IC layout for an inter-level effect, the method including: building a set of shape measurement regions each connected with an edge of the at least one feature; determining a set of shape parameters for each shape measurement region in the set of shape measurement regions; and creating a column vector representing each shape measurement region using the set of shape parameters, the column vector representing the inter-layer effect of the at least one feature, wherein the inter-layer effect includes a physical relationship between the at least one feature and another feature on a distinct level of the IC layout.
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