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Method for forming monolayer graphene-boron nitride heterostructures
Method for forming monolayer graphene-boron nitride heterostructures
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机译:形成单层石墨烯-氮化硼异质结构的方法
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摘要
A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
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