HYBRID WAFER DICING APPROACH USING AN ULTRA-SHORT PULSED LAGUERRE GAUSS BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with an ultra-short pulsed Laguerre Gauss laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The ultra-short pulsed Laguerre Gauss laser beam laser scribing process involves scribing with a laser beam having axially symmetrical polarization. The method also involves plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.