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OVERLAY FEATURE DESIGN AND METHOD FOR APPLICATION IN WAFER FABRICATION

机译:晶圆制造中的叠加特征设计和方法

摘要

The present invention provides a design of overlay feature for wafer fabrication. The design pattern is overlay featuring first via [20] and second via [24] reticles with smaller via boxes instead of one big via box. This way, during application procedures residues can be eliminated after tungsten plug process ensuring new and clean box in box pattern instead of deformed box in box. This overlay feature consist of a four line series of via, via boxes of nine units or more in a line, to eliminate residue after tungsten plug process. This overlay feature consist of a set of four line series of via forming part of a hypothetical square as a replacement of one big square via hole. This design improves the overlay feature and helps overcome overlay measurement problems. As such, improvement in accuracy of data measurement provides correct alignments results which enable alignment correction and thus ensure higher production yield. This design solves the overlay problem and can be placed at any via masks (first via [20] and second via [22]) of new products, replacing standard overlay box-box feature without any changes in process recipes of standard CMOS wafer fabrication.
机译:本发明提供了一种用于晶片制造的覆盖特征的设计。设计模式是叠加图,具有第一个过孔[20]和第二个过孔[24]掩模版,这些掩模版具有较小的过孔盒而不是一个较大的过孔盒。这样,在应用程序中,钨塞处理后可以消除残留物,从而确保新的和干净的盒式包装盒而不是盒式包装盒变形。此覆盖功能包括四线系列过孔,一行中有九个或更多单元的过孔盒,可消除钨插拔工艺后的残留物。此覆盖特征包括一组四线的过孔,这些孔形成一个假设正方形的一部分,以代替一个大正方形过孔。这种设计改进了覆盖功能,并有助于克服覆盖测量问题。这样,数据测量精度的提高提供了正确的对准结果,该对准结果使得能够进行对准校正并因此确保更高的产量。该设计解决了覆盖问题,可以放置在新产品的任何通孔掩模(第一个通孔[20]和第二个通孔[22])上,取代了标准的覆盖盒式功能,而无需更改标准CMOS晶圆制造的工艺配方。

著录项

  • 公开/公告号WO2016060545A1

    专利类型

  • 公开/公告日2016-04-21

    原文格式PDF

  • 申请/专利权人 MIMOS BERHAD;

    申请/专利号WO2015MY50115

  • 申请日2015-10-06

  • 分类号G03F1/38;G03F9;

  • 国家 WO

  • 入库时间 2022-08-21 14:18:09

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