REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND PROCESS FOR ITS PRODUCTION, AS WELL AS SUBSTRATE WITH REFLECTIVE LAYER FOR SUCH MASK BLANK AND PROCESS FOR ITS PRODUCTION

摘要

Provided is a method for producing a mask blank for extreme ultraviolet lithography (EUVL), wherein the mask blank exhibits excellent in-plane uniformity in a central wavelength of a reflected light within an extreme ultraviolet (EUV) wavelength range and in-plane uniformity in a peak reflexibility of light within the EUV wavelength range, with regard to a surface of multi-layered reflective membranes. Also provided are a substrate to which a reflexibility layer for EUVL used for the production of the mask blank for the EUVL is attached, and a production method thereof. The substrate includes an EUVL reflective layer which forms a reflective layer reflecting the EUV light on the substrate, wherein the reflective layer is a multi-layered reflective film made of a low-refractive index layer and a high-refractive index layer which are laminated alternatively multiple times.