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Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate
Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate
Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
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