PREPARATION METHOD FOR OXIDE THIN FILM TRANSISTOR WITH HIGH PERFORMANCE AND OXIDE THIN FILM TRANSISTOR MANUFACTURED THEREWITH

摘要

The present invention relates to a kind of manufacture oxide thin film transistors to have high-performance, has and especially increases mobility compared to existing oxide thin film transistor. Equally, which there is high-performance can be applied to transparent, and in particular, to a kind of display of large size. There is manufacture oxide thin film transistor the step of high-performance includes: coating substrate in glove box, to preheat the temperature 100-300& deg of substrate with insulated by oxide solution; C; Step heats the temperature 100-600& deg of substrate; Under the humidity of C 15-80%, cold is identical to form insulated by oxide body thin film; Have oxide semiconductor solution in glove box with cladding oxide isolated body thin film, heats the identical film for forming oxide semiconductor. ;The 2016 of copyright KIPO submissions