Methods of fabricating metal silicate layer and methods for semiconductor device using the same

摘要

The method for forming a capacitor, and a method for forming a uniform dispersion of the silicon forming the metal silicate film composition method, and a gate transistor using the same is provided. ; A method of forming the metal silicate film is a silicon precursor, a silicon precursor may be a homo reptik (homoleptic) silicon precursor, it characterized in that the ligand is associated with each of all the same molecular structure around the silicone. ; Homo reptik silicon precursor, a silicon precursor reptik heterocyclic ligand, an atomic layer deposition method, a metal silicate film