POWER DEVICE WITH MONOLITHICALLY INTEGRATED RC SNUBBER

摘要

The semiconductor structure includes a power transistor monolithically integrated with an RC snubber on a die. The power transistor includes body regions extending into the silicon region, gate electrodes insulated from the body region by a gate dielectric, source regions extending into the body regions, and a source interconnect that contacts the source regions, The source regions and the body regions have opposite conductivity types. The RC snubber includes snubber electrodes that are insulated from the silicon region by a snubber dielectric, and the snubber electrodes and the silicon regions form a snubber capacitor having a predetermined value. The snubber electrodes are connected to the source interconnect in a manner to create a snubber resistance of a predetermined value between the snubber capacitor and the source interconnect. The snubber capacitor and snubber resistor are configured to substantially damp the output ringing when the power transistor switches state.